PSMN039-100YS,115 Nexperia

PSMN039-100YS,115 electronic component of Nexperia
PSMN039-100YS,115 Nexperia
PSMN039-100YS,115 MOSFETs
PSMN039-100YS,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN039-100YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN039-100YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN039-100YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Single NChannel 100V 112A 74W 71mOhms
Datasheet: PSMN039-100YS,115 Datasheet (PDF)
Price (USD)
1: USD 0.8138 ea
Line Total: USD 0.81 
Availability : 31560
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.8138
10$ 0.5825
100$ 0.4158
500$ 0.3619
1000$ 0.2893
1500$ 0.2893
3000$ 0.286
9000$ 0.2849

Availability 27645
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.351
3000$ 0.3375
4500$ 0.3313
6000$ 0.3313
7500$ 0.325


Availability 31560
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8138
10$ 0.5825
100$ 0.4158
500$ 0.3619
1000$ 0.2893
1500$ 0.2893
3000$ 0.286
9000$ 0.2849


Availability 1455
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.3321


Availability 69840
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 866
Multiples : 1
QtyUnit Price
866$ 0.4508
1000$ 0.3997
10000$ 0.3564
100000$ 0.2986


Availability 17460
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5555
9000$ 0.5077
13500$ 0.4724
18000$ 0.4455

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN039-100YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN039-100YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN039-100YS N-channel LFPAK 100 V 39.5 m standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V - - 28.1 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --74 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C --42 mJ DS(AL)S GS j(init) drain-source I = 28.1 A V 100 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =15A -8 -nC GD GS D V =50V DS Q total gate charge - 23 - nC G(tot) see Figure 14 and 15PSMN039-100YS Nexperia N-channel LFPAK 100 V 39.5 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --71 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A - 30.8 39.5 m GS D T = 25 C see Figure 13 j 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN039-100YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN039-100YS 2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 2 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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