X-On Electronics has gained recognition as a prominent supplier of PSMN1R0-30YLC MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN1R0-30YLC MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN1R0-30YLC Nexperia

PSMN1R0-30YLC electronic component of Nexperia
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See Product Specifications
Part No.PSMN1R0-30YLC
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET, N CH, 30V, 100A, LFPAK
Datasheet: PSMN1R0-30YLC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 1.7322 ea
Line Total: USD 86.61

Availability - 680
Ships to you between
Fri. 21 Jun to Thu. 27 Jun
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
680 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 50
Multiples : 1
50 : USD 1.7322
200 : USD 1.5616
500 : USD 1.4845

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PSMN1R0-30YLC from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R0-30YLC and other electronic components in the MOSFET category and beyond.

PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology 15 January 2015 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8 package, qualified to 175C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 2 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 272 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.1 1.4 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 25 C - 0.85 1.15 m GS D j Fig. 12 Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 15 V - 14.6 26 nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge V = 4.5 V I = 25 A V = 15 V - 50 70 nC G(tot) GS D DS Fig. 15 Fig. 14 1 Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R0-30YLC LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN1R0-30YLC 1C030L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS PSMN1R0-30YLC All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 15 January 2015 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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