X-On Electronics has gained recognition as a prominent supplier of PSMN1R1-30EL,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R1-30EL,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN1R1-30EL,127 Nexperia

PSMN1R1-30EL,127 electronic component of Nexperia
PSMN1R1-30EL,127 Nexperia
PSMN1R1-30EL,127 MOSFETs
PSMN1R1-30EL,127  Semiconductors

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See Product Specifications
Part No. PSMN1R1-30EL,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 30V 1.3 mOhms
Datasheet: PSMN1R1-30EL,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.1263
10 : USD 1.833
100 : USD 1.4292
500 : USD 1.2427
1000 : USD 1.077
2500 : USD 1.077
5000 : USD 1.0563
10000 : USD 1.0304
N/A

Obsolete
0
MOQ : 8
Multiples : 1
8 : USD 4.3938
N/A

Obsolete
0
MOQ : 261
Multiples : 1
261 : USD 1.8558
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R1-30EL,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R1-30EL,127 and other electronic components in the MOSFETs category and beyond.

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PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T = 25 C V = 10 V Fig. 2 1 - - 120 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 2 - 1.1 1.3 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 100 C - 1.5 1.8 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 75 A V = 15 V - 37 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 118 - nC G(tot)Nexperia PSMN1R1-30EL N-channel 30 V 1.3 m logic level MOSFET in I2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 1.9 J DS(AL)S GS j(init) D source avalanche V 30 V R = 50 unclamped sup GS energy 1 Continuous current is limited by package. 2 Measured 3 mm from package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R1-30EL I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Marking Table 4. Marking codes Type number Marking code PSMN1R1-30EL PSMN1R1-30EL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 30 V DGR j j GS PSMN1R1-30EL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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