X-On Electronics has gained recognition as a prominent supplier of PSMN1R0-30YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R0-30YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN1R0-30YLC,115 Nexperia

PSMN1R0-30YLC,115 electronic component of Nexperia
PSMN1R0-30YLC,115 Nexperia
PSMN1R0-30YLC,115 MOSFETs
PSMN1R0-30YLC,115  Semiconductors

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See Product Specifications
Part No. PSMN1R0-30YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
Datasheet: PSMN1R0-30YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
342: USD 0.7605 ea
Line Total: USD 260.09 
Availability - 7049
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ: 342  Multiples: 1
Pack Size: 1
Availability Price Quantity
7049
Ship by Fri. 18 Jul to Thu. 24 Jul
MOQ : 342
Multiples : 1
342 : USD 0.7605
343 : USD 0.7593
500 : USD 0.7351
1000 : USD 0.7034
3000 : USD 0.6963
6000 : USD 0.6893

1116
Ship by Fri. 25 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 2.5444
10 : USD 1.5914
30 : USD 1.2756
100 : USD 1.035
500 : USD 0.9567
1500 : USD 0.9212

25780
Ship by Wed. 16 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 1.65
10 : USD 1.236
100 : USD 0.9031
500 : USD 0.7744
1000 : USD 0.7711
1500 : USD 0.77
9000 : USD 0.7414
24000 : USD 0.7249

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R0-30YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R0-30YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology 15 January 2015 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8 package, qualified to 175C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 2 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 272 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.1 1.4 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 25 C - 0.85 1.15 m GS D j Fig. 12Nexperia PSMN1R0-30YLC N-channel 30 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V = 4.5 V I = 25 A V = 15 V - 14.6 26 nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge V = 4.5 V I = 25 A V = 15 V - 50 70 nC G(tot) GS D DS Fig. 15 Fig. 14 1 Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R0-30YLC LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN1R0-30YLC 1C030L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS PSMN1R0-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 January 2015 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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