X-On Electronics has gained recognition as a prominent supplier of PSMN2R6-40YS,115 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN2R6-40YS,115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN2R6-40YS,115 Nexperia

PSMN2R6-40YS,115 electronic component of Nexperia
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Part No.PSMN2R6-40YS,115
Manufacturer: Nexperia
Category:MOSFET
Description: NXP Semiconductors MOSFET N-CH 40V 2.8 mOhm Standard MOSFET
Datasheet: PSMN2R6-40YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0051 ea
Line Total: USD 1.01

Availability - 27161
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
541 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 149
Multiples : 1
149 : USD 0.8719
250 : USD 0.8632
500 : USD 0.8003

27161 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0051
10 : USD 0.9924
100 : USD 0.8924
250 : USD 0.8901
500 : USD 0.8245
1500 : USD 0.7613
3000 : USD 0.7556
9000 : USD 0.7372

1455 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1500
Multiples : 1500
1500 : USD 0.8996

541 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 11
Multiples : 1
11 : USD 0.8924
25 : USD 0.8908
100 : USD 0.865
250 : USD 0.8563
500 : USD 0.8003

7275 - WHS 5


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1500
Multiples : 1500
1500 : USD 0.8752
3000 : USD 0.7621
9000 : USD 0.7543

     
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC convertors Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 131 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 179 mJ DS(AL)S GS j(init) drain-source I = 100 A V 40 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =25A -14 -nC GD GS D V = 20 V see Figure 14 DS Q total gate charge - 63 - nC G(tot) see Figure 15Nexperia PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =25A --3.7 m DSon GS D on-state resistance T = 100 C see Figure 12 j see Figure 13 V =10V I =25A -2 2.8 m GS D T = 25 C see Figure 12 j see Figure 13 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D drain 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R6-40YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 Nexperia B.V. 2017. All rights reserved PSMN2R6-40YS 1 Product data sheet Rev. 01 23 June 2009 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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