PSMN1R5-30YL,115 Nexperia

PSMN1R5-30YL,115 electronic component of Nexperia
PSMN1R5-30YL,115 Nexperia
PSMN1R5-30YL,115 MOSFETs
PSMN1R5-30YL,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN1R5-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R5-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN1R5-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 30V 100A
Datasheet: PSMN1R5-30YL,115 Datasheet (PDF)
Price (USD)
1: USD 1.675 ea
Line Total: USD 1.68 
Availability : 0
  
QtyUnit Price
1$ 1.675
10$ 1.236
100$ 0.8514
500$ 0.7612
1000$ 0.6787
1500$ 0.616
3000$ 0.616
9000$ 0.616

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.666
3000$ 0.646


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5816


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3935
10$ 1.2384
100$ 0.9784
500$ 0.7588


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1500
QtyUnit Price
1$ 0.6628
250$ 0.6563


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.675
10$ 1.236
100$ 0.8514
500$ 0.7612
1000$ 0.6787
1500$ 0.616
3000$ 0.616
9000$ 0.616


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 14
Multiples : 1
QtyUnit Price
14$ 2.4893


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.859
5$ 1.6826
13$ 1.2538
35$ 1.1846

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R5-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R5-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power convertors density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current T =25C V = 10 V see --100A D mb GS Figure 1 P total power T = 25 C see Figure 2 --109W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics R drain-source V =10V I =15A --2.4 m DSon GS D on-state T = 100 C see Figure 14 j resistance V =10V I =15A -1.3 1.5 m GS D T =25C j Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -8.7 -nC GD GS D V =12 V see Figure 15 see DS Figure 16PSMN1R5-30YL Nexperia N-channel 30 V 1.5 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -36.2-nC G(tot) GS D V =12 V see Figure 15 DS Avalanche ruggedness E non-repetitive V =10V T =25C --241mJ DS(AL)S GS j(init) drain-source I =100 A V 30 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R5-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN1R5-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 9 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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