Product Information

PSMN2R0-30YL

PSMN2R0-30YL electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 30V; 100A; 97W; SOT669
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6027 ea
Line Total: USD 1.6

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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PSMN2R0-30YL
Nexperia

1 : USD 1.722
5 : USD 1.442
15 : USD 1.078
40 : USD 1.022

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

PSMN2R0-30YL N-channel 30 V 2 m logic level MOSFET in LFPAK Rev. 4 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --97 W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics drain-source V =10V I =15A -1.552 m R DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -7.5 -nC GD GS D V =12 V see Figure 14 DS see Figure 15 LFPAKPSMN2R0-30YL NXP Semiconductors N-channel 30 V 2 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -30 - nC G(tot) GS D V =12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --151mJ DS(AL)S GS j(init) drain-source I =100 A V 30 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN2R0-30YL All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 10 March 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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