X-On Electronics has gained recognition as a prominent supplier of PSMN2R8-40PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R8-40PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R8-40PS,127 Nexperia

PSMN2R8-40PS,127 electronic component of Nexperia
PSMN2R8-40PS,127 Nexperia
PSMN2R8-40PS,127 MOSFETs
PSMN2R8-40PS,127  Semiconductors

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See Product Specifications
Part No. PSMN2R8-40PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 40V 100A
Datasheet: PSMN2R8-40PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.0375 ea
Line Total: USD 3.04 
Availability - 1
Ship by Wed. 28 May to Fri. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 28 May to Fri. 30 May
MOQ : 1
Multiples : 1
1 : USD 3.0375
10 : USD 2.4035
50 : USD 1.958
100 : USD 1.76
500 : USD 1.507
1000 : USD 1.32
2500 : USD 1.309
5000 : USD 1.309

395
Ship by Fri. 30 May to Thu. 05 Jun
MOQ : 102
Multiples : 51
102 : USD 2.882
153 : USD 2.2785
250 : USD 2.1331
500 : USD 1.8169
1000 : USD 1.5031
2000 : USD 1.4617

3433
Ship by Fri. 30 May to Thu. 05 Jun
MOQ : 216
Multiples : 1
216 : USD 2.1719
500 : USD 1.9531
1000 : USD 1.8125
10000 : USD 1.6094
100000 : USD 1.3505

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN2R8-40PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R8-40PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 3. Applications DC-to-DC converters Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 211 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 10 A T = 100 C - - 4.5 m DSon GS D j resistance Fig. 12 Fig. 13 V = 10 V I = 10 A T = 25 C 2 - 2.3 2.8 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 20 V - 17 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 71 - nC G(tot)Nexperia PSMN2R8-40PS N-channel TO220 40 V 2.8 m standard level MOSFET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 407 mJ DS(AL)S GS j(init) D source avalanche V 40 V unclamped R = 50 sup GS energy 1 Continuous current rating is limited by package. 2 Measured 3 mm from package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R8-40PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN2R8-40PS PSMN2R8-40PS PSMN2R8-40PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 February 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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