PSMN3R5-80PS

PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --338W tot mb T junction temperature -55 - 175 C j Static characteristics drain-source on-state V =10V I =25A -5 5.8 m R DSon GS D resistance T =100 C see Figure 12 j 2 V =10V I =25A -3 3.5 m GS D T = 25 C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =75A -27 - nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 139 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --676mJ DS(AL)S GS j(init) avalanche energy I = 120 A V 80 V D sup R =50 unclamped GS TO-220ABPSMN3R5-80PS NXP Semiconductors N-channel 80 V, 3.5 m standard level MOSFET in TO-220 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN3R5-80PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 19 April 2011 2 of 15