PSMN3R5-80PS,127 Nexperia

PSMN3R5-80PS,127 electronic component of Nexperia
PSMN3R5-80PS,127 Nexperia
PSMN3R5-80PS,127 MOSFETs
PSMN3R5-80PS,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN3R5-80PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R5-80PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN3R5-80PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 80V 3.5 mOhms
Datasheet: PSMN3R5-80PS,127 Datasheet (PDF)
Price (USD)
1: USD 5.45 ea
Line Total: USD 5.45 
Availability : 0
  
QtyUnit Price
1$ 5.45
10$ 3.1395
100$ 2.761

Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 5000
Multiples : 1
QtyUnit Price
5000$ 2.5276
6000$ 2.5024
10000$ 2.4772
12000$ 2.4532
15000$ 2.428
20000$ 2.4041
25000$ 2.3801
30000$ 2.3562
50000$ 2.3323


Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 9.9463
10$ 8.6162
100$ 7.0599
500$ 6.01
1000$ 5.0687
2000$ 4.8152


Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.4638
10$ 4.439
100$ 3.7264
500$ 3.402
1000$ 3.024


Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 50
Multiples : 50
QtyUnit Price
50$ 3.4151
150$ 3.1621
250$ 3.1621
750$ 3.1621
1250$ 3.1621


Availability 0
Ship by Fri. 21 Nov to Tue. 25 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.45
10$ 3.1395
100$ 2.761


Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.4244
10$ 3.3469
30$ 3.2965
100$ 3.2443


Availability 0
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 7
Multiples : 7
QtyUnit Price
7$ 1.6294
10$ 1.5494
25$ 1.351
100$ 1.1489
250$ 1.1086
500$ 1.0535
1000$ 1.0325

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN3R5-80PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R5-80PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A -5 5.8 m R DSon GS D resistance T =100 C see Figure 12 j 2 V =10V I =25A -3 3.5 m GS D T = 25 C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =75A -27 -nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 139 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --676mJ DS(AL)S GS j(init) avalanche energy I = 120 A V 80 V D sup R =50 unclamped GSPSMN3R5-80PS Nexperia N-channel 80 V, 3.5 m standard level MOSFET in TO-220 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN3R5-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 19 April 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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