PSMN3R5-30YL,115 Nexperia

PSMN3R5-30YL N-channel 30 V 3.5 m logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 74 W tot mb Static characteristics R drain-source on-state V = 10 V I = 15 A T = 25 C - 2.43 3.5 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 10 A V = 12 V V = 4.5 V - 5 - nC GD D DS GS Fig. 14 Fig. 15 Q total gate charge - 19 - nC G(tot) Avalanche ruggedness E non-repetitive drain- I = 100 A V 30 V R = 50 - - 54 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy 1 Continuous current is limited by package.Nexperia PSMN3R5-30YL N-channel 30 V 3.5 m logic level MOSFET in LFPAK 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to 1 2 3 4 drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-30YL LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN3R5-30YL 3R530 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V peak drain-source t 25 ns f 500 kHz E 180 nJ - 35 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 74 W tot mb I drain current V = 10 V T = 100 C Fig. 2 1 - 86 A D GS mb V = 10 V T = 25 C Fig. 2 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 447 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T = 25 C 1 - 100 A S mb I peak source current pulsed t 10 s T = 25 C - 447 A SM p mb Avalanche ruggedness PSMN3R5-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 3 August 2018 2 / 13