Product Information

PSMN4R3-80PS

PSMN4R3-80PS electronic component of Nexperia

Datasheet
MOSFET, N CH, 80V, 120A, TO220AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9829 ea
Line Total: USD 3.98

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PSMN4R3-80PS
Nexperia

1 : USD 4.8313
10 : USD 3.8096
100 : USD 3.1302
500 : USD 2.7535
1000 : USD 2.5302

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
LoadingGif

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Additional Infomation About Product

PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --80 V DS j j voltage 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --306W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics 2 drain-source V =10V I =25A -3.7 4.3 m R DSon GS D on-state resistance T = 25 C see Figure 13 j 2 V =10V I =25A -6.1 7.1 m GS D T = 100 C see Figure 12 j TO-220ABPSMN4R3-80PS NXP Semiconductors N-channel 80 V, 4.3 m standard level MOSFET in TO220 Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =75A -28.4- nC GD GS D V =40V see Figure 14 DS Q total gate charge - 111 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --676mJ DS(AL)S GS j(init) drain-source I =120 A V 80 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN4R3-80PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 18 April 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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