Product Information

PSMN4R4-80PS,127

PSMN4R4-80PS,127 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W; TO220AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.212 ea
Line Total: USD 4.21

12 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
12 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 4.212
3 : USD 3.783
6 : USD 2.938
10 : USD 2.925
16 : USD 2.769

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PSMN4R4-80PS N-channel 80 V, 4.1 m standard level FET Rev. 01 18 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC - DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 306 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =80A -25 -nC GD GS D V = 40 V see Figure 14 DS see Figure 15 Static characteristics R drain-source V =10V I =15A 1 -3.3 4.1 m DSon GS D on-state resistance T = 25 C see Figure 6 j see Figure 13 1 Measured 3 mm from package.Nexperia PSMN4R4-80PS N-channel 80 V, 4.1 m standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R4-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB Nexperia B.V. 2017. All rights reserved PSMN4R4-80PS 1 Product data sheet Rev. 01 18 June 2009 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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