PSMN4R5-40BS,118 Nexperia

PSMN4R5-40BS,118 electronic component of Nexperia
PSMN4R5-40BS,118 Nexperia
PSMN4R5-40BS,118 MOSFETs
PSMN4R5-40BS,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN4R5-40BS,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R5-40BS,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN4R5-40BS,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Std N-chanMOSFET
Datasheet: PSMN4R5-40BS,118 Datasheet (PDF)
Price (USD)
1: USD 1.7625 ea
Line Total: USD 1.76 
Availability : 0
  
QtyUnit Price
1$ 1.7625
10$ 1.392
100$ 1.0285
500$ 0.8888
800$ 0.77
4800$ 0.7414

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 4800
Multiples : 800
QtyUnit Price
4800$ 0.809


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3072
10$ 1.1272
100$ 0.9062


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3072
10$ 1.1272
100$ 0.9062


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 0.7755
1600$ 0.6169
2400$ 0.5744
5600$ 0.5531


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7625
10$ 1.392
100$ 1.0285
500$ 0.8888
800$ 0.77
4800$ 0.7414


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2198
10$ 1.6626
100$ 1.1957
500$ 1.1104

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN4R5-40BS,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R5-40BS,118 and other electronic components in the MOSFETs category and beyond.

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PSMN4R5-40BS N-channel 40 V 4.5 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j 1 I drain current T =25C V =10 V see Figure 1 - - 100 A D mb GS P total power dissipation T =25C see Figure 2 - - 148 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =25A T = 100 C -5.5 6.5 m DSon GS D j resistance see Figure 13 see Figure 5 =10 V I =25A T =25C - 3.79 4.5 m V GS D j see Figure 5 Dynamic characteristics Q gate-drain charge V =10 V I =25A V =20V -8.8 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge V =10 V I =0A V =0V - 35 - nC G(tot) GS D DS Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C I =100 A - - 152 mJ DS(AL)S GS j(init) D avalanche energy V 40 V unclamped R =50 sup GS 1 Continuous current is limited by packagePSMN4R5-40BS Nexperia N-channel 40 V 4.5 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R5-40BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN4R5-40BS PSMN4R5-40BS PSMN4R5-40BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 22 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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