Product Information

PSMN4R5-40BS,118

PSMN4R5-40BS,118 electronic component of Nexperia

Datasheet
MOSFET Std N-chanMOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6018 ea
Line Total: USD 1.6

3853 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3853 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.5306
10 : USD 1.3289
100 : USD 1.0418
250 : USD 1.0418
500 : USD 1.0216
800 : USD 0.8329
2400 : USD 0.8294
4800 : USD 0.827

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PSMN4R5-40BS N-channel 40 V 4.5 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j 1 I drain current T =25C V =10 V see Figure 1 - - 100 A D mb GS P total power dissipation T =25C see Figure 2 - - 148 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =25A T = 100 C -5.5 6.5 m DSon GS D j resistance see Figure 13 see Figure 5 =10 V I =25A T =25C - 3.79 4.5 m V GS D j see Figure 5 Dynamic characteristics Q gate-drain charge V =10 V I =25A V =20V -8.8 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge V =10 V I =0A V =0V - 35 - nC G(tot) GS D DS Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C I =100 A - - 152 mJ DS(AL)S GS j(init) D avalanche energy V 40 V unclamped R =50 sup GS 1 Continuous current is limited by packagePSMN4R5-40BS Nexperia N-channel 40 V 4.5 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R5-40BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN4R5-40BS PSMN4R5-40BS PSMN4R5-40BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 22 March 2012 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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