Product Information

PSMN4R3-80PS,127

PSMN4R3-80PS,127 electronic component of Nexperia

Datasheet
MOSFET N-Ch 80V 4.3 mOhms
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 1.5902 ea
Line Total: USD 159.02

0 - Global Stock
MOQ: 100  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 5000
Multiples : 5000
5000 : USD 1.909

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 4.7628
3 : USD 4.2743
5 : USD 3.2105
14 : USD 3.0355

0 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 100
Multiples : 50
100 : USD 1.5902

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PSMN4R3-80PS N-channel 80 V, 4.3 m standard level MOSFET in TO220 Rev. 03 18 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --80 V DS j j voltage 1 drain current T =25C V =10V --120A I D mb GS see Figure 1 P total power T = 25 C see Figure 2 --306W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics 2 drain-source V =10V I =25A -3.7 4.3 m R DSon GS D on-state resistance T = 25 C see Figure 13 j 2 V =10V I =25A -6.1 7.1 m GS D T = 100 C see Figure 12 jPSMN4R3-80PS Nexperia N-channel 80 V, 4.3 m standard level MOSFET in TO220 Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =75A -28.4-nC GD GS D V =40V see Figure 14 DS Q total gate charge - 111 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --676mJ DS(AL)S GS j(init) drain-source I =120 A V 80 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN4R3-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 18 April 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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