PSMN4R5-30YLC,115 Nexperia

PSMN4R5-30YLC,115 electronic component of Nexperia
PSMN4R5-30YLC,115 Nexperia
PSMN4R5-30YLC,115 MOSFETs
PSMN4R5-30YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN4R5-30YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R5-30YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN4R5-30YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CH 30 V 4.8 mOhms LOGIC LEVEL MOSFET
Datasheet: PSMN4R5-30YLC,115 Datasheet (PDF)
Price (USD)
1: USD 1.4375 ea
Line Total: USD 1.44 
Availability : 0
  
QtyUnit Price
1$ 1.4375
10$ 0.912
100$ 0.5929
500$ 0.4587
1000$ 0.396
1500$ 0.3663
3000$ 0.3377
9000$ 0.3135
24000$ 0.3102

Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5053
3000$ 0.5034
6000$ 0.5015
9000$ 0.4997
12000$ 0.4978
15000$ 0.4959
24000$ 0.4939
30000$ 0.492
75000$ 0.49


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.2617
3000$ 0.2495
4500$ 0.2495


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2402
50$ 0.2349
150$ 0.2315
500$ 0.2279


Availability 0
Ship by Thu. 20 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4375
10$ 0.912
100$ 0.5929
500$ 0.4587
1000$ 0.396
1500$ 0.3663
3000$ 0.3377
9000$ 0.3135
24000$ 0.3102


Availability 0
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.0578

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN4R5-30YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R5-30YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN4R5-30YLC N-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 5 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Server power supplies Load switching Sync rectifier Power OR-ing 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T =25C V =10V -- 84 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 -- 61 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =20A -5.1 6.1 m DSon GS D resistance T =25 C see Figure 12 j =10V I =20A -4 4.8 m V GS D T =25 C see Figure 12 jPSMN4R5-30YLC Nexperia N-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =20A -2.85-nC GD GS D V = 15 V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =20A -9.6 -nC G(tot) GS D V = 15 V see Figure 14 DS see Figure 15 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R5-30YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN4R5-30YLC 4C530L 1 % = placeholder for manufacturing site code. PSMN4R5-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 5 July 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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