X-On Electronics has gained recognition as a prominent supplier of PSMN5R0-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN5R0-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN5R0-30YL,115 Nexperia

PSMN5R0-30YL,115 electronic component of Nexperia
PSMN5R0-30YL,115 Nexperia
PSMN5R0-30YL,115 MOSFETs
PSMN5R0-30YL,115  Semiconductors

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See Product Specifications
Part No. PSMN5R0-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET <=30V N CH TRENCHFET
Datasheet: PSMN5R0-30YL,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5412 ea
Line Total: USD 0.54 
Availability - 10480
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1500
Multiples : 1500
1500 : USD 0.377
3000 : USD 0.3563
4500 : USD 0.3563
6000 : USD 0.35
7500 : USD 0.3437

10480
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.5412
10 : USD 0.5288
100 : USD 0.4279
500 : USD 0.3663
1000 : USD 0.3201
1500 : USD 0.2904

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN5R0-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN5R0-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage drain current T =25C V =10V --91 A I D mb GS see Figure 1 P total power T = 25 C see Figure 2 --61 W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics drain-source V =10V I =15A -3.635 m R DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -3.8 -nC GD GS D V =12 V see Figure 14 DS see Figure 15PSMN5R0-30YL Nexperia N-channel 30 V 5 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -14.1-nC G(tot) GS D V =12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --32 mJ DS(AL)S GS j(init) drain-source I =84A V 30 V D sup avalanche energy R =50 unclamped GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN5R0-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 9 March 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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