Product Information

PSMN5R0-30YL,115

PSMN5R0-30YL,115 electronic component of Nexperia

Datasheet
MOSFET <=30V N CH TRENCHFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7774 ea
Line Total: USD 0.78

11581 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.338
3000 : USD 0.338
4500 : USD 0.338
7500 : USD 0.338
15000 : USD 0.338

11581 - WHS 2


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.7774
10 : USD 0.6854
100 : USD 0.4784
500 : USD 0.4117
1000 : USD 0.3277
1500 : USD 0.3036
3000 : USD 0.3036
9000 : USD 0.3036

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PSMN5R0-30YL N-channel 30 V 5 m logic level MOSFET in LFPAK Rev. 4 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage drain current T =25C V =10V --91 A I D mb GS see Figure 1 P total power T = 25 C see Figure 2 --61 W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics drain-source V =10V I =15A -3.635 m R DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -3.8 -nC GD GS D V =12 V see Figure 14 DS see Figure 15PSMN5R0-30YL Nexperia N-channel 30 V 5 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -14.1-nC G(tot) GS D V =12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --32 mJ DS(AL)S GS j(init) drain-source I =84A V 30 V D sup avalanche energy R =50 unclamped GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN5R0-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 9 March 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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