PSMN5R0-100ES,127 Nexperia

PSMN5R0-100ES,127 electronic component of Nexperia
PSMN5R0-100ES,127 Nexperia
PSMN5R0-100ES,127 MOSFETs
PSMN5R0-100ES,127  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PSMN5R0-100ES,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN5R0-100ES,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN5R0-100ES,127
Manufacturer: Nexperia
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) I2PAK Rail
Datasheet: PSMN5R0-100ES,127 Datasheet (PDF)
Price (USD)
5: USD 1.7003 ea
Line Total: USD 8.5 
Availability : 0
  
QtyUnit Price
5$ 1.7003

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5
Multiples : 1
QtyUnit Price
5$ 1.7003

   
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Continuous Drain Current
Gate-Source Voltage Max
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Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the PSMN5R0-100ES,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN5R0-100ES,127 and other electronic components in the MOSFETs category and beyond.

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PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 3 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A -7.7 9 m R DSon GS D resistance T = 100 C see Figure 12 j see Figure 13 2 V =10V I =25A -4.3 5 m GS D T =25C see Figure 13 j Dynamic characteristics gate-drain charge V =10V I =75A -49 -nC Q GD GS D V = 50 V see Figure 14 DS total gate charge - 170 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --537mJ DS(AL)S GS j(init) drain-source avalanche I = 120 A V 100 V D sup energy R =50 Unclamped GSPSMN5R0-100ES Nexperia N-channel 100 V 5 m standard level MOSFET in I2PAK 1 Continuous current limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN5R0-100ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 26 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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