Product Information

PSMN5R0-100PS,127

PSMN5R0-100PS,127 electronic component of NXP

Datasheet
MOSFET N-Ch 100V 5 mOhms

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.4807 ea
Line Total: USD 8.48

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 3.1894
10 : USD 2.7496
100 : USD 2.253
500 : USD 1.918
1000 : USD 1.6176
2000 : USD 1.5367
5000 : USD 1.4789

0 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 5000
Multiples : 5000
5000 : USD 2.2885
10000 : USD 2.277
25000 : USD 2.2655

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PSMN5R0-100PS N-channel 100 V 5 m standard level MOSFET in TO-220 Rev. 3 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A -7.7 9 m R DSon GS D resistance T = 100 C see Figure 12 j see Figure 13 2 V =10V I =25A -4.3 5 m GS D T =25 C see Figure 13 j Dynamic characteristics gate-drain charge V =10V I =75A -49 -nC Q GD GS D V = 50 V see Figure 14 DS total gate charge - 170 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --537mJ DS(AL)S GS j(init) drain-source avalanche I = 120 A V 100 V D sup energy R =50 Unclamped GSPSMN5R0-100PS Nexperia N-channel 100 V 5 m standard level MOSFET in TO-220 1 Continuous current limited by package 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN5R0-100PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 26 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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