X-On Electronics has gained recognition as a prominent supplier of PSMN9R1-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN9R1-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN9R1-30YL,115 Nexperia

PSMN9R1-30YL,115 electronic component of Nexperia
PSMN9R1-30YL,115 Nexperia
PSMN9R1-30YL,115 MOSFETs
PSMN9R1-30YL,115  Semiconductors

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See Product Specifications
Part No. PSMN9R1-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 57A (Tc) 52W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN9R1-30YL,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8763 ea
Line Total: USD 0.88 
Availability - 2962
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2962
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8763
10 : USD 0.61
100 : USD 0.3652
500 : USD 0.2981
1000 : USD 0.2607
1500 : USD 0.2442
9000 : USD 0.2123

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN9R1-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN9R1-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN9R1-30YL N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK Rev. 2 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j I drain current T =25C V =10V --57 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --52 W P tot mb Static characteristics drain-source on-state V =10V I =15A -7.8 9.1 m R DSon GS D resistance T =25C j Dynamic characteristics Q gate-drain charge V =10V I =45A -4.1 -nC GD GS D V =15V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =45A -8.4 -nC G(tot) GS D V =15V see Figure 14 DS see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --17 mJ DS(AL)S GS j(init) drain-source avalanche I =57 A V 30 V D sup energy R =50 unclamped GSPSMN9R1-30YL Nexperia N-channel 9.1 m 30 V TrenchMOS logic level FET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R1-30YL LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V peak drain-source voltage t 25 ns f 500 kHz E 60 nJ -35 V DSM p DS(AL) pulsed V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -40 A D GS mb V =10V T =25C see Figure 1 -57 A GS mb I peak drain current pulsed t 10 s T =25C - 229 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 -52 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 57 A S mb I peak source current pulsed t 10 s T = 25 C - 229 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =57A -17 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS PSMN9R1-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 16 May 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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