X-On Electronics has gained recognition as a prominent supplier of PSMN9R0-30LL,115 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN9R0-30LL,115 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN9R0-30LL,115

PSMN9R0-30LL,115 electronic component of NXP
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Part No. PSMN9R0-30LL,115
Manufacturer: NXP
Category: MOSFET
Description: MOSFET N-CHAN 30V 21A
Datasheet: PSMN9R0-30LL,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1400: USD 0.332 ea
Line Total: USD 464.8

Availability - 0
MOQ: 1400  Multiples: 1400
Pack Size: 1400
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1400
Multiples : 1400
1400 : USD 0.332

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Factory Pack Quantity :
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PSMN9R0-30LL N-channel DFN3333-8 30 V 9 m logic level MOSFET Rev. 5 13 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources Small footprint for compact designs 1.3 Applications Battery protection Load switching DC-to-DC converters Power ORing 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150 C - - 30 V DS j j I drain current T =25 C; V =10V; --21 A D mb GS see Figure 1 P total power dissipation T =25 C; see Figure 2 --50 W tot mb T junction temperature -55 - 150 C j Static characteristics R drain-source on-state resistance V =4.5 V; I =5A; T =25C; - 10.6 13 m DSon GS D j see Figure 12 V =10V; I =5A; T =100 C; --11.9m GS D j see Figure 13 V =10V; I =5A; T =25C; - 89m GS D j see Figure 12 DFN3333-8PSMN9R0-30LL NXP Semiconductors N-channel DFN3333-8 30 V 9 m logic level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V; I =10A; V =15V; -2.9 -nC GD GS D DS see Figure 14; see Figure 17 Q total gate charge - 20.6 - nC G(tot) V =4.5 V; I =10A; V =15V; -10 -nC GS D DS see Figure 17; see Figure 14 Avalanche ruggedness E non-repetitive drain-source V =10V; T =25C; --32 mJ DS(AL)S GS j(init) avalanche energy I =40A; V 30 V; unclamped; D sup R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source 8 765 D 2S source 3S source G 4 G gate mbb076 S 5,6,7,8 D drain 1 234 mb Transparent top view SOT873-1 (DFN3333-8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R0-30LL DFN3333-8 plastic thermal enhanced very thin small outline package; no SOT873-1 leads; 8 terminals PSMN9R0-30LL All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 13 December 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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