X-On Electronics has gained recognition as a prominent supplier of PSMN8R7-80PS,127 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN8R7-80PS,127 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN8R7-80PS,127 Nexperia

PSMN8R7-80PS,127 electronic component of Nexperia
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See Product Specifications
Part No.PSMN8R7-80PS,127
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-CHAN 80V 64A
Datasheet: PSMN8R7-80PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1275 ea
Line Total: USD 2.13

Availability - 3679
Ships to you between
Mon. 17 Jun to Wed. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3679 - WHS 1


Ships to you between Mon. 17 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1275
10 : USD 1.472
100 : USD 1.288
500 : USD 1.1845
1000 : USD 1.1051
2500 : USD 1.1051
5000 : USD 1.1051
10000 : USD 1.1051

65 - WHS 2


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 2.314
3 : USD 2.093
10 : USD 1.833
11 : USD 1.6471
28 : USD 1.5574

3346 - WHS 3


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 50
Multiples : 50
50 : USD 1.2536
5000 : USD 1.2492
10000 : USD 1.2359

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN8R7-80PS,127 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R7-80PS,127 and other electronic components in the MOSFET category and beyond.

PSMN8R7-80PS N-channel 80 V 8.7 m standard level MOSFET in TO-220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j I drain current T =25C V =10V --90 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --170W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =10A --14 m R DSon GS D resistance T = 100 C see Figure 12 j 1 V =10V I =10A -7.5 8.7 m GS D T =25C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =25A -11 -nC GD GS D V =40 V see Figure 14 DS Q total gate charge - 52 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --120mJ DS(AL)S GS j(init) drain-source avalanche I =90A V 80 V D sup R =50 unclamped energy GS 1 Measured 3 mm from package.PSMN8R7-80PS Nexperia N-channel 80 V 8.7 m standard level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R7-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN8R7-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 1 November 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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