Product Information

SI2304DS,215

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MOSFET TAPE-7 MOSFET
CMOS dual supply differential line receiver with wide common-mode voltage range.
Manufacturer: Nexperia

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1535 ea
Line Total: USD 0.15

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 3000 Multiples : 3000 SI2304DS,215 Nexperia	3000 : USD 0.1539 6000 : USD 0.1446

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 SI2304DS,215 Nexperia	1 : USD 0.5584 10 : USD 0.4514 100 : USD 0.3078 500 : USD 0.2304 1000 : USD 0.1726

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 1 Multiples : 1 SI2304DS,215 Nexperia	1 : USD 0.1535 10 : USD 0.1459 100 : USD 0.1157 1000 : USD 0.1028 3000 : USD 0.0998 9000 : USD 0.096

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 3000 Multiples : 1 SI2304DS,215 Nexperia	3000 : USD 0.1073 6000 : USD 0.1027 12000 : USD 0.1008

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 64 Multiples : 1 SI2304DS,215 Nexperia	64 : USD 0.5229

0 - Global Stock Ships to you between Fri. 03 May to Thu. 09 May MOQ : 73 Multiples : 1 SI2304DS,215 Nexperia	73 : USD 0.39 100 : USD 0.2339 250 : USD 0.2313 500 : USD 0.2227

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Additional Infomation About Product

The SI2304DS,215 is a single N-channel low-side logic-level enhancement-mode Field Effect Transistor (FET) from Nexperia. It is designed for use in low-voltage automotive body electronics, lighting and power management applications. The device features low on-resistance and very low gate charge, making it an ideal solution for automotive power switching applications. It has an integrated diode to protect against reverse voltages, a fast switching speed, and a planar structure that ensure good saturation performance. The device can be used in applications where efficiency, fast switching, and accurate control of load current are important.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 1.7 A 1.7 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 117 mOhms 117 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 830 mW 830 mW
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 23 - 3 SOT - 23 - 3
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Configuration Single Single
Brand Nexperia Nexperia
Fall Time 7.5 ns 7.5 ns
Rise Time 7.5 ns 7.5 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 18 ns 18 ns