Si2304BDS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.070 at V = 10 V 3.2 TrenchFET Power MOSFET GS 30 2.6 0.105 at V = 4.5 V 2.6 100 % R Tested GS g Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 sSteady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.2 2.6 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C 2.5 2.1 A A Pulsed Drain Current I 10 DM a, b I 0.9 0.62 Continuous Source Current (Diode Conduction) S T = 25 C 1.08 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.69 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 90 115 a R Maximum Junction-to-Ambient thJA Steady State 130 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 60 75 thJF Notes: a. Surface mounted on FR4 board, t 5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board. For SPICE model information via the Worldwide Web: Si2304BDS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 (BR)DSS GS D V Gate-Threshold Voltage V V = V , I = 250 A 1.5 3 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 0.5 DS GS I V = 30 V, V = 0 V, T = 55 C 10 A Zero Gate Voltage Drain Current DSS DS GS J V = 30 V, V = 1 V, T = 25 C 1 DS GS J a I V 4.5 V, V = 10 V 6A On-State Drain Current D(on) DS GS V = 10 V, I = 2.5 A 0.055 0.070 GS D a R Drain-Source On-Resistance DS(on) V = 4.5 V, I = 2 A 0.080 0.105 GS D a g V = 4.5 V, I = 2.5 A 6S Forward Transconductance fs DS D Diode Forward Voltage V I = 1.25 A, V = 0 V 0.8 1.2 V SD S GS Dynamic Gate Charge Q V = 15 V, V = 5 V, I = 2.5 A 2.6 4 g DS GS D Total Gate Charge Q 4.6 7 gt nC Gate-Source Charge Q V = 15 V, V = 10 V, I = 2.5 A 0.8 gs DS GS D Q Gate-Drain Charge 1.15 gd Gate Resistance R f = 1 MHz 0.6 3 6 g Input Capacitance C 225 iss V = 15 V, V = 0 V, f = 1 MHz Output Capacitance C 50 pF DS GS oss Reverse Transfer Capacitance C 28 rss Switching Turn-On Delay Time t 7.5 12 d(on) V = 15 V, R = 15 Rise Time t 12.5 20 r DD L ns I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 19 30 D GEN g d(off) Fall Time t 15 25 f Notes: a. Pulse test: PW 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 10 V = 10 thru 5 V GS 8 8 6 6 4 4 4 V T = 125 C C 2 2 25 C - 55 C 3 V 0 0 0 2468 10 0 1234 5 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72503 2 S11-1908-Rev. E, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D