Product Information

1N5408

1N5408 electronic component of NTE

Datasheet
STANDARD DIODE, 3A, 1KV, DO-27

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

46: USD 0.1649 ea
Line Total: USD 7.5854

9512 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 46  Multiples: 1
Pack Size: 1
Availability Price Quantity
3167 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 100
Multiples : 1

Stock Image

1N5408
NTE

100 : USD 0.3095
1000 : USD 0.2566
2500 : USD 0.2402
5000 : USD 0.229
7500 : USD 0.2222
25000 : USD 0.2125
50000 : USD 0.2093
100000 : USD 0.2062

9512 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 46
Multiples : 1

Stock Image

1N5408
NTE

46 : USD 0.1649

3104 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 300
Multiples : 100

Stock Image

1N5408
NTE

300 : USD 0.4023

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
LoadingGif

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1I5400 thru 1N5408 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp, DO201AD Features: 3 Amp Operation at T = +75C with no Thermal Runaway A High Current Capability Low Leakage Absolute Maximum Ratings: (T = +25C unless otherwise specified, Note 1) A Peak Repetitive Reverse Voltage, V RRM DC Reverse Voltage, V R 1N5400 ..................................................................... 50V 1N5401 .................................................................... 100V 1N5402 .................................................................... 200V 1N5403 .................................................................... 300V 1N5404 .................................................................... 400V 1N5405 .................................................................... 500V 1N5406 .................................................................... 600V 1N5407 .................................................................... 800V 1N5408 ................................................................... 1000V Maximum RMS Voltage 1N5400 ..................................................................... 35V 1N5401 ..................................................................... 70V 1N5402 .................................................................... 140V 1N5403 .................................................................... 210V 1N5404 .................................................................... 280V 1N5405 .................................................................... 350V 1N5406 .................................................................... 420V 1N5407 .................................................................... 560V 1N5408 .................................................................... 700V Average Rectified Current (.375 Lead Length, T = +75C), I ............................ 3A A O Peak Forward Surge Current, I F(surge) (Superimposed on a Rated Load, 8.3ms Single Half Sine Wave) .................. 200A Total Device Dissipation, P ....................................................... 6.25W D Derate Above +25C ..................................................... 50mW/C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R .................................. +20C/W thJA Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Current I Rated DC Voltage T = +25C 5.0 A R A T = +100C 500 A A Maximum Forward Voltage V i = 3A 1.2 V F F Average Reverse Current I Full Cycle, T = +105C 0.5 mA R(AV) A Junction Capacitance V = 4V, f = 1MHz 30 pF R 1.000 (25.4) .375 (9.5) Min Max .052 (1.32) Dia Max .210 (5.33) Dia Max Color Band Denotes Cathode

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