NTE215 is a 2N1407 Germanium PNP Transistor. It is an epitaxial planar type transistor, used in a variety of switching, amplifier, and general purpose applications. It has a maximum power dissipation of 500 mW, a maximum collector-emitter voltage of 35V, and a maximum collector-base voltage of 45V. It also has a maximum emitter-base voltage of 6V, a maximum collector current of 150mA, and a maximum forward base-emitter voltage of 1.2V.