NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington TO3PN Type Package Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO3PN type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performances in the linear region make this device particularly suitable for car ignitions where current limiting is achieved desaturing the darlington. Features: High Performance Electronic Ignition Darlington High Ruggedness Applications: Automotive Market Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage (Open Emitter), V ......................................... 500V CBO CollectorEmitter Voltage (Open Base), V ......................................... 450V CEO EmitterBase Voltage (Open Collector), V ........................................... 5V EBO Collector Current, I C Continuous .................................................................. 15A Peak ....................................................................... 30A Base Current, I B Continuous ................................................................... 1A Peak ........................................................................ 5A Total Power Dissipation (T = +25C), P ............................................ 105W C T Maximum Operating Junction Temperature, T ...................................... +150 C J Storage Temperature Range, T .......................................... 40 to +150C stg Thermal Resistance, Junction toCase, R .................................... 2.08 C/W thJC Rev. 215Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0 450 V CEO(sus) C B Collector Cutoff Current I T = +25 C 1 mA V = 500V, CES J CE V = 0, BE T = +125 C 5 mA J I V = 450V, I = 0 1 mA CEO CE B Emitter Cutoff Current I I = 0, V = 5V 50 mA EBO C EB ON Characteristics CollectorEmitter Saturation Voltage V I = 8A, I = 150mA 1.8 V CE(sat) C B BaseEmitter Saturation Voltage V I = 8A, I = 150mA 2.2 V BE(sat) C B DC Current Gain h I = 5A, V = 10V 300 FE C CE Diode Forward Voltage V I = 10A 2.8 V F F .189 (4.8) .614 (15.6) .787 (20.0) .590 .138 (15.0) (3.5) Dia .889 (22.6) BC E .215 (5.45)