NTE2372 NTE

NTE2372 MOSFET PCh, Enhancement Mode High Speed Switch TO220 Type Package D Features: Dynamic dv/dt Rating Fast Switching Ease of Paralleling G Simple Drive Requirements TO220 Case Style S Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C ................................................................ 3.5A C T = +100 C ................................................................ 2.0A C Pulsed Drain Current (Note 1), I ................................................... 14A DM Power Dissipation (T = +25 C), P ................................................. 40W C D Derate Linearly Above 25 C .............................................. 0.32W/ C GatetoSource Voltage, V ....................................................... 20 GS Inductive Current, Clamp, I ........................................................ 14A LM Peak Diode Recovery dv/dt (Note 2), dv/dt .......................................... 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R ..................................... 3.1 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 62 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ............ 0.5 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. I 3.5A, di/dt 95A/ s, V V , T +150 C SD DD (BR)DSS J Note 3. Pules Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250 A 200 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.22 V/ C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 1.5A, Note 3 1.5 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 1.5A, Note3 1.0 mhos fs DS D DraintoSource Leakage Current I V = 200V, V = 0V 100 A DSS DS GS V = 160V, V = 0V, T = +125 C 500 A DS GS J GatetoSource Forward Leakage I V = 20V 100 nA GSS GS GatetoSource Reverse Leakage I V = 20V 100 nA GSS GS Total Gate Charge Q I = 4A, V = 160V, V = 10V, 22 nC g D DS GS Note 3 GatetoSource Charge Q 12 nC gs GatetoDrain (Miller) Charge Q 10 nC gd TurnOn Delay Time t 15 ns V = 100V, I = 1.5A, R = 50 , d(on) DD D G R = 67 , Note 3 D Rise Time t 25 ns r TurnOff Delay Time t 20 ns d(off) Fall Time t 15 ns f Internal Drain Inductance L Between lead, .250in. (6.0) mm from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C 350 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 100 pF oss Reverse Transfer Capaticance C 30 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 3.5 A S Pulsed Source Current (Body Diode) I Note 1 14 A SM Diode Forward Voltage V T = +25 C, I = 3.5A, V = 0V, 7.0 V SD J S GS Note 3 Reverse Recovery Time t 300 450 ns T = +25 C, I = 3.5A, rr J F di/dt = 100A/ s, Note 3 Reverse Recovery Charge Q 1.9 2.9 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 3. Pulse width 300 s duty cycle 2%.