NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for generalpurpose amplifier and lowfrequency switching applications. Features: High DC Current Gain: h = 3000 Typ I = 4A FE C CollectorEmitter Sustaining Voltage: V = 80V Min 100mA CEO(sus) Low CollectorEmitter Saturation Voltage: V = 2V Max I = 4A CE(sat) C = 3V Max I = 8A C Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter SustainingVoltage V I = 100mA, I = 0, Note 1 80 V CEO(sus) C B Collector Cutoff Current I V = 40V, I = 0 0.5 mA CEO CE E I V = 80V, V = 1.5V 0.5 mA CEX CE BE(off) V = 80V, V = 1.5V, T = +150C 5.0 mA CE BE(off) A Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 4A 750 18000 FE CE C V = 3V, I = 8A 100 CE C CollectorEmitter Saturation Voltage V I = 4A, I = 16mA 2.0 V CE(sat) C B I = 8A, I = 80mA 3.0 V C B BaseEmitter Saturation Voltage V I = 8A, I = 80mA 4.0 V BE(sat) C B BaseEmitter ON Voltage V V = 3V, I = 4A 2.8 V BE(on) CE C Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 3A, f = 1kHz 300 fe CE C Magnitude of Common Emitter h V = 3V, I = 3A, f = 1MHz 4.0 MHz fe CE C SmallSignal ShortCircuit Forward Current Transfer Ratio Output Capacitance C pF ob NTE243 V = 10V, I = 0, f = 0.1MHz 200 CB E NTE244 300 pF Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE243 .135 (3.45) Max C .350 (8.89) .875 (22.2) B Dia Max Seating Plane E .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter NTE244 .215 (5.45) .665 (16.9) .156 (3.96) Dia C (2 Holes) .430 B (10.92) .188 (4.8) R Max .525 (13.35) R Max E Base Collector/Case