X-On Electronics has gained recognition as a prominent supplier of NTE2501 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2501 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2501 NTE

NTE2501 electronic component of NTE
NTE2501 NTE
NTE2501 Bipolar Transistors - BJT
NTE2501  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE2501
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 300V; 100mA; 7W; TO126
Datasheet: NTE2501 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
31: USD 2.3064 ea
Line Total: USD 71.5 
Availability - 0
MOQ: 31  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 31
Multiples : 1
31 : USD 2.3064
250 : USD 1.6951
500 : USD 1.6017
1000 : USD 1.5483
2500 : USD 1.4949
5000 : USD 1.4549
7500 : USD 1.4281
10000 : USD 1.4015

0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 2.1711
3 : USD 1.9404
10 : USD 1.7233
11 : USD 1.6419
25 : USD 1.5469

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2501 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2501 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2501 (NPN) & NTE2502 (PNP) Silicon Complementary Transistors High Voltage for Video Output TO126 Fully Isolated Type Package Features: High Breakdown Voltage Excellent High Frequency Characteristics Applications: High Definition CRT Display Color TV Chroma Output, High Breakdown Voltage Drivers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ...................................................... 300V CBO CollectorEmitter Voltage, V ..................................................... 300V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous ............................................................... 100mA Peak .................................................................... 200mA Collector Dissipation, P C T = +25C ................................................................. 1.5W A T = +25C .................................................................. 7W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 A EBO EB C DC Current Gain h V = 10V, I = 10mA 100 200 FE CE C Gain Bandwidth Product f V = 30V, I = 10mA 70 MHz T CE C Rev. 316Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2501 C V = 30V, f = 1MHz 2.6 pF ob CB NTE2502 3.1 pF Reverse Transfer Capacitance NTE2501 C V = 30V, f = 1MHz 1.8 pF re CB NTE2502 2.3 pF CollectorEmitter Saturation Voltage V I = 20mA, I = 2mA 600 mV CE(sat) C B BaseEmitter Saturation Voltage V I = 20mA, I = 2mA 1.0 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 300 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 300 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10A, I = 0 5 V (BR)EBO E C .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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