NTE2924 NTE

NTE2924 electronic component of NTE
NTE2924 NTE
NTE2924 MOSFETs
NTE2924  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE2924 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2924 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTE2924
Manufacturer:NTE
Category:MOSFETs
Description:Transistor: N-MOSFET; 600V; 6.8A; TO247
Datasheet:NTE2924 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
3: USD 29.5625 ea
Line Total: USD 88.69 
Availability : 0
  
QtyUnit Price
3$ 29.5625
50$ 19.044
100$ 17.58
200$ 16.32
500$ 15.24
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 29.5625
50$ 19.044
100$ 17.58
200$ 16.32
500$ 15.24


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 22.3742
3$ 21.1529

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2924 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2924 and other electronic components in the MOSFETs category and beyond.

ImagePart-Description
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Stock ImageNTE2927
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Stock ImageNTE2925
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ImagePart-Description
Stock ImageNTE2930
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Stock ImageNTE2931
Transistor: N-MOSFET; 200V; 12.8A; TO3PML
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2932
Transistor: N-MOSFET; 200V; 21.3A; TO3PML
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2933
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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Stock ImageNTE2935
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2936
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Stock : 0
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Stock ImageNTE2940
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2941
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock ImageNTE2942
Transistor: N-MOSFET; 100V; 9.7A; TO220F
Stock : 29
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NTE2924 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C ................................................................. 6.8A C T = +100 C ................................................................ 4.3A C Pulsed Drain Current (Note 1), I ................................................... 27A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.2W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 410mJ AS Avalanche Current (Note 1), I ..................................................... 6.8A AR Repetitive Avalanche Energy (Note 1), E .......................................... 15mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt ........................................... 3V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.83 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, L = 16mH, R = 25 , I = 6.8A DD J G AS Note 3. I 6.8A, di/dt 80A/ s, V 600V, T +150 C SD DD J Rev. 1013Note 4. Pules Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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