X-On Electronics has gained recognition as a prominent supplier of NTE2924 mosfet across the USA, India, Europe, Australia, and various other global locations. NTE2924 mosfet are a product manufactured by NTE. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTE2924 NTE

NTE2924 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2924
Manufacturer: NTE
Category:MOSFET
Description: Transistor: N-MOSFET; 600V; 6.8A; TO247
Datasheet: NTE2924 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 27.4509 ea
Line Total: USD 82.35

Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 3
Multiples : 1
3 : USD 27.4509
50 : USD 17.6837
100 : USD 16.3243
200 : USD 15.1543
500 : USD 14.1514

0 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 20.776
3 : USD 19.642

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
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We are delighted to provide the NTE2924 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2924 and other electronic components in the MOSFET category and beyond.

NTE2924 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C ................................................................. 6.8A C T = +100 C ................................................................ 4.3A C Pulsed Drain Current (Note 1), I ................................................... 27A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.2W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 410mJ AS Avalanche Current (Note 1), I ..................................................... 6.8A AR Repetitive Avalanche Energy (Note 1), E .......................................... 15mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt ........................................... 3V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.83 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, L = 16mH, R = 25 , I = 6.8A DD J G AS Note 3. I 6.8A, di/dt 80A/ s, V 600V, T +150 C SD DD J Rev. 1013Note 4. Pules Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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