NTE2954 NTE

NTE2954 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Features: Low Gate Charge: 147nC Typ Low Reverse Transfer Capacitance: 300pF Typ Fast Switching G 100% Avalanche Tested Improved dv/dt Capability S Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage, V ........................................................ 100V DSS Drain Current (Note 1), I D Continuous T = +25C ............................................................... 90A C T = +100C .............................................................. 68A C Pulsed (Note 2) ............................................................. 360A Drain Source Diode Forward Current, I S Continuous .................................................................. 90A Pulsed ..................................................................... 360A GateSource Voltage, V ........................................................ 30V GSS Single Pulsed Avalanche Energy (Note 3), E ..................................... 2430mJ AS Avalanche Current (Note 2), I ...................................................... 90A AR Repetitive Avalanche Energy (Note 2), E .......................................... 25mJ AR Peak Diode Recovery (Note 4), dv/dt .............................................. 4.5V/ns Power Dissipation (T = +25C), P ................................................. 83W C D Derate Above +25 C ...................................................... 0.55W/C Operating Junction Temperature Range, T .................................. 55 to +175C J Storage Temperature Range, T .......................................... 55 to +175C stg Thermal Resistance, Junction toCase, R ..................................... 1.8 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Note 1. Drain current limited by maximum junction temperature. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 0.3mH, I = 90A, V = 50V, R = 25, Starting T = +25C. AS DD G J Note 4. I 90A, di/dt 200A/s, V BV , Starting T = +25C. SD DD DSS J Rev. 914Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0V, I = 250A 100 V (BR)DSS GS D Breakdown Voltage Temperature BV / I = 250A, Referenced to +25C 0.1 V/C DSS D Coefficient T J Zero Gate Voltage Drain Current I V = 100V, V = 0 1 A DSS DS GS V = 80V, T = +150C 10 A DS C GateBody Leakage Current I V = 20V, V = 0V 100 nA GSS GS DS ON Characteristics Gate Threshold Voltage V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 45A 8.5 10.0 m DS(on) GS D Forward Transconductance g V = 40V, I = 45A, Note 5 72 S FS DS D Dynamic Characteristics Input Capacitance C V = 0V, V = 25V, f = 1MHz 4730 6150 pF iss GS DS Output Capacitance C 1180 1530 pF oss Reverse Transfer Capacitance C 300 390 pF rss Switching Characteristics TurnOn Delay Time t V = 50V I = 90A, R = 25, Note5, 52 114 ns d(on) DD , D G Note 6 Rise Time t 492 944 ns r TurnOff Delay Time t 304 618 ns d(off) Fall Time t 355 720 ns f Total Gate Charge Q V = 80V I = 90A, V = 10V, Note5, 147 191 nC g DS , D GS Note 6 GateSource Charge Q 28 nC gs GateDrain Charge Q 60 nC gd DrainSource Diode Characteristics and Maximum Ratings V 1.4 V DrainSource Forward Voltage V = 0V, I = 90A SD GS S Reverse Recovery Time t 114 ns rr V = 0V, I = 90A, dI /dt = 100A/s, GS S F Note 5 Q 0.54 C Reverse Recovery Charge rr Note 5. Pulse Test: Pulse width 300s, Duty cycle 2%. Note 6. Essentially independent of operating temperature.