NTE2945 NTE

NTE2945 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D Low Static Drain Source ON Resistance Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Operating Area G Improved High Temperature Reliability TO220 Type Isolated Package S Absolute Maximum Ratings: DrainSource Voltage (Note 1), V ................................................ 400V DSS DrainGate Voltage (R = 1M , Note 1), V ...................................... 400V GS DGR GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous T = +25 C .............................................................. 5.5A C T = +100 C ............................................................. 3.9A C Pulsed (Note 2) .............................................................. 40A Gate Current (Pulsed), I ........................................................ 1.5A GM Single Pulsed Avalanche Energy (Note 3), E ...................................... 157mJ AS Avalanche Current, I ............................................................. 5.5A AS Total Power Dissipation (T = +25 C), P ............................................ 40W C D Derate Above 25 C ...................................................... 0.32W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Thermal Resistance: Maximum JunctiontoCase, R ......................................... 3.12K/W thJC Typical Case toSink (Mounting surface flat, smooth, and greased), R ....... 0.5K/W thCS Maximum Junction toAmbient (Free Air Operation), R .................... 62.5K/W thJA Note 1. T = +25 to +150 C. J Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. L = 9.1mH, V = 50V, R = 25 , Starting T = +25 C. DD G J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0v, I = 250 A 450 V DSS GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D GateSource Leakage Forward I V = 20V 100 nA GSS GS GateSource Leakage Reverse I V = 20V 100 nA GSS GS Zero Gate Voltage Drain Current I V = Max. Rating, V = 0 250 A DSS DS GS V = 0.8 Max. Rating, T = +125 C 1000 A DS C Static DrainSource ON Resistance R V = 10V, I = 5A, Note 4 0.55 DS(on) GS D Forward Transconductance g V 50V, I = 5A, Note 4 5.8 8.7 mhos fs DS D Input Capacitance C V = 0V, V = 25V, f = 1MHz 1500 pF iss GS DS Output Capacitance C 170 pF oss Reverse Transfer Capacitance C 75 pF rss TurnOn Delay Time t 14 21 ns V = 0.5 BV I = 10A, Z = 9.1 , d(on) DD DSS, D O (MOSFET switching times are essentially Rise Time t 27 41 ns r independent of operating temperature) TurnOff Delay Time t 50 75 ns d(off) Fall Time t 24 36 ns f Total Gate Charge (GateSource Plus GateDrain) Q V = 10V, I = 10A, V = 0.8 Max. 79 nC g GS D DS Rating, (Gate charge is essentially GateSource Charge Q 1013 nC gs independent of operating temperature) GateDrain (Miller) Charge Q 32.3 nC gd SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 10 A S Pulse Source Current I (Body Diode) Note 2 40 A SM Diode Forward Voltage V T = +25 C, I = 10A, V = 0V, Note 4 2 V SD J S GS Reverse Recovery Time t T = +25 C, I = 10A, dI /dt = 100A/ s 370 ns rr J F F Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.