NTE2984 Logic Level MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating Logic Level Gate Drive R (on) Specified at V = 4V & 5V DS GS +175 C Operating Temperature G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Drain Current, I D Continuous (V = 5V) GS T = +25 C ............................................................... 17A C T = +100 C .............................................................. 12A C Pulsed (Note 1) .............................................................. 68A Total Power Dissipation (T = +25 C), P ............................................ 60W C D Derate Above 25 C ...................................................... 0.40W/ C GateSource Voltage, V ......................................................... 10V GS Single Pulsed Avalanche Energy (Note 2), E ...................................... 110mJ AS Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.5V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T .......... +300 C L Mounting Torque, 6 32 or M3 Screw ..................................... 10 lbf in (1.1 N m) Thermal Resistance: Maximum JunctiontoCase, R .......................................... 2.5K/W thJC Typical Case toSink (Mounting surface flat, smooth, and greased), R ....... 0.5K/W thCS Maximum Junction toAmbient (Free Air Operation), R ..................... 62K/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 444 H, V = 25V, R = 25 , Starting T = +175 C. DD G JNote 3. I 17A, di/dt 140A/ s, V V , T +175 C. SD DD (BR)DSS J Rev. 1013