NTE473 NTE

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X-On Electronics has gained recognition as a prominent supplier of NTE473 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE473 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	NTE473
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 40V; 1A; 7W; TO39; Pout:2.5W
Datasheet:	NTE473 Datasheet (PDF)

Price (USD)

10: USD 15.847 ea
Line Total: USD 158.47

Availability : 0

Qty	Unit Price
10	$ 15.847
50	$ 5.805
100	$ 5.3595
200	$ 4.9815
500	$ 4.644

NTE473 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 26 Sep to Thu. 02 Oct

MOQ : 10
Multiples : 1

Qty	Unit Price
10	$ 15.847
50	$ 5.805
100	$ 5.3595
200	$ 4.9815
500	$ 4.644

Availability 0

Ship by Wed. 24 Sep to Fri. 26 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 9.058
3	$ 5.936
8	$ 5.614

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To39 To39
Kind Of Transistor Rf Rf
Type Of Transistor Npn Npn
Output Power 2.5 W 2.5 W
Power Dissipation 7 W 7 W
Frequency 500 MHz 500 MHz
Collector-Emitter Voltage 40 V 40 V
Collector Current 1 A 1 A

We are delighted to provide the NTE473 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE473 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages in VHF equipment. Features: Specified 175MHz, 28V Characteristics: Output Power: 2.5W Minimum Gain: 10dB Efficiency: 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 1 40 V CEO(sus) C B EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 0.1 mA CEO CE B I V = 30V, V = 1.5V, T = +200C 5.0 mA CEX CE BE(off) C V = 65V, V = 1.5V 1.0 mA CE BE(off) Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO BE C Note 1. Pulsed thru a 25mH inductor.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 250mA, V = 5V 10 FE C CE CollectorEmitter Saturation Voltage V I = 250mA, I = 50mA 1.0 V CE(sat) C B Dynamic Characteristics Current Gain Bandwidth Product f I = 100mA, V = 28V, f = 100MHz 500 MHz T C CE Output Capacitance C V = 30V, I = 0, f = 100kHz 8.0 10.0 pF ob CB E Functional Tests Power Input P V = 28V, P = 2.5W, f = 175MHz 0.25 W in CE out CommonEmitter Amplifier Power Gain G 10 dB pe Collector Efficiency 50 % .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45 .031 (.793)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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