Product Information

AFSC5G37D37T2

AFSC5G37D37T2 electronic component of NXP

Datasheet
RF Amplifier Airfast Power Amplifier Module 3600-3800 MHz 29 dB 5.7 W Avg.

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 29.2665 ea
Line Total: USD 58533

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 12 Oct to Mon. 16 Oct

MOQ : 2000
Multiples : 2000
2000 : USD 24.2269
4000 : USD 24.1688

     
Manufacturer
NXP
Product Category
RF Amplifier
Mounting Style
Smd/Smt
Package / Case
HLQFN - 26
Type
Airfast Power Amplifier Module
Technology
Silicon
Operating Frequency
3600 MHz to 3800 MHz
Gain
29.7 Db
Operating Supply Voltage
29 V
OIP3 - Third Order Intercept
44.3 Dbm, 44.7 Dbm
Maximum Operating Temperature
+ 125 C
Packaging
Cut Tape
Series
Afsc5g37d37
Test Frequency
3800 MHz
Brand
Nxp Semiconductors
Number Of Channels
1 Channel
Moisture Sensitive
Yes
Product Type
Rf Amplifier
Factory Pack Quantity :
2000
Subcategory
Wireless & Rf Integrated Circuits
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DocumentNumber:AFSC5G37D37 NXPSemiconductors Rev. 0, 08/2019 TechnicalData PowerAmplifierModuleforLTEand AFSC5G37D37 5G TheAFSC5G37D37isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh 36003800MHz,29dB,5.7WAvg. performance in the smallest footprint. Ideal for applications in massive MIMO AIRFASTPOWERAMPLIFIER systems,outdoorsmallcells,andlowpowerremoteradioheads.The MODULE field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE systems. Typical LTE Performance: P = 5.7 W Avg., V =29Vdc,1 20MHz LTE, out DD (1) Input SignalPAR = 8dB 0.01%Probability onCCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 3600MHz 29.5 32.3 39.3 3700MHz 29.7 33.6 38.8 3800MHz 29.9 34.4 37.6 1. AlldatameasuredwithdevicesolderedinNXP referencecircuit. 10mm 6mmModule Features Frequency: 36003800MHz Advancedhighperformancein--packageDoherty Fully matched(50ohm input/output, DC blocked) Designedfor low complexity analogor digitallinearizationsystems 2019NXPB.V. AFSC5G37D37 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND N.C. 2 17 RF out (1) V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) 14 5 4 15 3 27 16 2 17 1 18 Pin 1 index area (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections 1. V andV areDCcoupledinternaltothepackageandmustbepoweredby asingleDCpowersupply. DP2 DC2 AFSC5G37D37 RF DeviceData NXP Semiconductors 2 V 26 6 6 26 GND GP2 25 7 V 7 25 GND GP1 V 24 8 8 24 GND GC 1 V 23 9 GC 2 9 23 GND 22 10 V 10 22 GND DC1 (1) V 21 11 11 21 GND DC2 20 12 N.C. 12 20 GND 19 13 GND 13 19 GND

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI