AFSC5G37D37T2

DocumentNumber:AFSC5G37D37 NXPSemiconductors Rev. 0, 08/2019 TechnicalData PowerAmplifierModuleforLTEand AFSC5G37D37 5G TheAFSC5G37D37isafullyintegratedDohertypoweramplifiermodule designedforwirelessinfrastructureapplicationsthatdemandhigh 36003800MHz,29dB,5.7WAvg. performance in the smallest footprint. Ideal for applications in massive MIMO AIRFASTPOWERAMPLIFIER systems,outdoorsmallcells,andlowpowerremoteradioheads.The MODULE field--provenLDMOSpoweramplifiersaredesignedforTDDandFDDLTE systems. Typical LTE Performance: P = 5.7 W Avg., V =29Vdc,1 20MHz LTE, out DD (1) Input SignalPAR = 8dB 0.01%Probability onCCDF. CarrierCenter Gain ACPR PAE Frequency (dB) (dBc) (%) 3600MHz 29.5 32.3 39.3 3700MHz 29.7 33.6 38.8 3800MHz 29.9 34.4 37.6 1. AlldatameasuredwithdevicesolderedinNXP referencecircuit. 10mm 6mmModule Features Frequency: 36003800MHz Advancedhighperformancein--packageDoherty Fully matched(50ohm input/output, DC blocked) Designedfor low complexity analogor digitallinearizationsystems 2019NXPB.V. AFSC5G37D37 RF DeviceData NXP Semiconductors 1Pin 1 index area GND 1 18 GND N.C. 2 17 RF out (1) V 3 16 GND DP2 V 4 15 GND DP1 RF 5 14 GND in (Top View) 14 5 4 15 3 27 16 2 17 1 18 Pin 1 index area (Bottom View) Note: Exposed backside of the package is DC and RF ground. Figure1.PinConnections 1. V andV areDCcoupledinternaltothepackageandmustbepoweredby asingleDCpowersupply. DP2 DC2 AFSC5G37D37 RF DeviceData NXP Semiconductors 2 V 26 6 6 26 GND GP2 25 7 V 7 25 GND GP1 V 24 8 8 24 GND GC 1 V 23 9 GC 2 9 23 GND 22 10 V 10 22 GND DC1 (1) V 21 11 11 21 GND DC2 20 12 N.C. 12 20 GND 19 13 GND 13 19 GND