DocumentNumber:AFT27S010N FreescaleSemiconductor Rev. 3, 12/2015 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET This1.26WRFpowerLDMOStransistorisdesignedforcellularbase AFT27S010NT1 stationapplications coveringthefrequency rangeof 728to3600MHz. Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD I =90mA,P = 1.26W Avg., Input Signal PAR = 9.9dB 0.01% DQ out (1) Probability onCCDF. 2100MHz 7283600MHz,1.26WAVG.,28V AIRFASTRFPOWERLDMOS G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) TRANSISTOR 2110MHz 21.6 23.2 9.1 --42.0 --11 2140MHz 21.8 23.0 9.0 --41.5 --15 2170MHz 21.7 22.6 8.7 --41.7 --15 2300MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) PLD--1.5W 2300MHz 21.2 23.6 9.0 --40.9 --10 PLASTIC 2350MHz 21.6 22.6 8.6 --40.0 --22 2400MHz 20.7 21.0 8.3 --40.1 --9 2600MHz G OutputPAR ACPR IRL ps D RF /V Frequency (dB) (%) (dB) (dBc) (dB) in GS RF /V out DS 2500MHz 19.6 22.0 9.8 --44.8 --7 2600MHz 21.0 22.7 9.4 --41.4 --15 2700MHz 19.6 21.2 8.9 --39.7 --5 (Top View) Note: Thecenterpadonthebacksideofthe Typical Single--Carrier W--CDMA Performance: V =28Vdc, DD packageisthesourceterminalforthe I =80mA,P = 1.26W Avg., Input Signal PAR = 9.9dB 0.01% DQ out transistor. (1) Probability onCCDF. 700MHz Figure1.PinConnections G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 728MHz 24.3 25.5 9.3 --44.0 --12 748MHz 24.3 24.7 9.4 --43.9 --12 768MHz 24.3 23.8 9.5 --43.6 --12 3500MHz G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 3400MHz 14.7 15.8 9.0 --44.9 --7 3500MHz 16.0 16.8 9.0 --44.9 --8 3600MHz 15.0 17.4 8.6 --44.2 --4 1. Alldata measured in fixture withdevicesolderedtoheatsink. Features Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Designedfor Digital PredistortionError CorrectionSystems Universal BroadbandDrivenDevicewithInternal RF Feedback FreescaleSemiconductor, Inc., 20132015. All rights reserved. AFT27S010NT1 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+150 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 3.5 C/W JC CaseTemperature77C,1.3W CW,28Vdc,I =90mA,2140MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =12.1 Adc) DS D GateQuiescentVoltage V 1.5 1.8 2.3 Vdc GS(Q) (V =28Vdc,I =90mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =6Vdc,I =121mAdc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat