Product Information

BLF2324M8LS200PU

BLF2324M8LS200PU electronic component of NXP

Datasheet
RF MOSFET Transistors Power LDMOS trans
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 206.0268 ea
Line Total: USD 206.03

0 - Global Stock
MOQ: 1  Multiples: 60
Pack Size: 60

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 60
1 : USD 206.0268
5 : USD 194.2482

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Mounting Style
Packaging
Package Case
Brand
Rds On Drain Source Resistance
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Rohs Mouser
LoadingGif

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Additional Infomation About Product

BLF2324M8LS200P Power LDMOS transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Test signal f I V P G ACPR Dq DS L(AV) p D 5M (MHz) (mA) (V) (W) (dB) (%) (dBc) [1] 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.2 32 37 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (2300 MHz to 2400 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to 2400 MHz frequency rangeBLF2324M8LS200P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF2324M8LS200P - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j [1] T case temperature - 150 C case [1] Continuous use at maximum temperature will affect the MTTF. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80 C; P = 60 W 0.217 K/W th(j-c) case L BLF2324M8LS200P#2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 1 September 2015 2 of 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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