BFG403W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1emitter Low noise figure 2 base High transition frequency 3emitter Very low feedback capacitance. 4 collector APPLICATIONS Pager front ends 3 4 handbook, halfpage RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. 21 Top view MSB842 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Marking code: P3. dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 33.6 mA C P total power dissipation T 140 C 16 mW tot s h DC current gain I =3mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2 V f = 1MHz 20 fF re C CB f transition frequency I =3mA V = 2 V f = 2 GHz T =25 C 17 GHz T C CE amb G maximum power gain I =3mA V = 2 V f = 2 GHz T =25 C 22 dB max C CE amb F noise figure I =1mA V = 2 V f = 900 MHz = 1 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2