BFG480W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification 1998 Oct 21 Supersedes data of 1998 Jul 09NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1emitter Low noise figure 2base High transition frequency 3emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. 3 4 handbook, halfpage APPLICATIONS RF front end with high linearity system demands (CDMA) 21 Common emitter class AB driver. Top view MSB842 DESCRIPTION Marking code: P6. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 80 250 mA C P total power dissipation T 60 C 360 mW tot s f transition frequency I =80mA V = 2 V f = 2 GHz T =25 C21 GHz T C CE amb G maximum gain I =80mA V = 2 V f = 2 GHz T =25 C16 dB max C CE amb F noise figure I =8mA V = 2 V f = 2 GHz = 1.8 dB C CE S opt power gain Pulsed class-AB <1 :2 t =5 ms 13.5 dB G p p V = 3.6 V f = 2 GHz P =100 mW CE L collector efficiency Pulsed class-AB <1 :2 t =5 ms 45 % C p V = 3.6 V f = 2 GHz P =100 mW CE L CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Oct 21 2