Product Information

BFG540W/X,115

BFG540W/X,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 8V 120mA 9GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2265 ea
Line Total: USD 679.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2265

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X BFG540W/XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 04NXP Semiconductors Product specification BFG540W NPN 9 GHz wideband transistor BFG540W/X BFG540W/XR FEATURES MARKING High power gain TYPE NUMBER CODE lfpage 4 3 Low noise figure BFG540W N9 High transition frequency BFG540W/X N7 Gold metallization ensures BFG540W/XR N8 excellent reliability. 1 2 PINNING Top view MBK523 APPLICATIONS PIN DESCRIPTION RF front end wideband applications in BFG540W (see Fig.1) the GHz range, such as analog and digital cellular telephones, cordless 1 collector Fig.1 SOT343N. telephones (CT2, CT3, PCN, DECT, 2base etc.), radar detectors, pagers, satellite 3emitter television tuners (SATV), MATV/CATV amplifiers and repeater 4emitter amplifiers in fibre-optic systems. BFG540W/X (see Fig.1) 3 4 halfpage 1 collector DESCRIPTION 2emitter NPN silicon planar epitaxial 3base transistors in 4-pin dual-emitter 4emitter 21 SOT343N and SOT343R plastic Top view MSB842 BFG540W/XR (see Fig.2) packages. 1 collector 2emitter 3base Fig.2 SOT343R. 4emitter QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I collector current (DC) 120 mA C P total power dissipation T 85 C 500 mW tot s h DC current gain I =40mA V = 8 V 100 120 250 FE C CE C feedback capacitance I =0 V =8V f= 1MHz 0.5 pF re C CB f transition frequency I =40mA V =8V f= 1GHz T =25 C 9 GHz T C CE amb G maximum unilateral I =40mA V = 8 V f = 900 MHz T =25 C 16 dB UM C CE amb power gain I =40mA V =8V f= 2GHz T =25 C10 dB C CE amb 2 s insertion power gain I =40mA V = 8 V f = 900 MHz T =25 C14 15 dB 21 C CE amb F noise figure I =10mA V =8V f= 2GHz 2.1 dB s opt C CE 2000 May 23 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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