Product Information

BFG424F,115

BFG424F,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 25GHZ WIDEBAND

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2684 ea
Line Total: USD 0.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.2684
10 : USD 0.2034
25 : USD 0.1383
100 : USD 0.1089
250 : USD 0.093
500 : USD 0.0839

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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BFG424F NPN 25 GHz wideband transistor Rev. 2 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance 1.3 Applications Radio Frequency (RF) front end wideband applications such as: analog and digital cellular telephones cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) radar detectors pagers Satellite Antenna TeleVison (SATV) tuners high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 4.5 V CEO I collector current - 25 30 mA C 1 P total power dissipation T 90 C - - 135 mW tot spBFG424F NXP Semiconductors NPN 25 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit h DC current gain I =25mA V =2V 50 80 120 FE C CE T =25 C j C collector-base V = 2 V f = 1 MHz - 102 - fF CBS CB capacitance f transition frequency I =25mA V =2V -25 -GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =25mA V =2V -23 -dB p(max) C CE f= 2GHz T =25 C amb NF noise figure I =2mA V =2V -1.2 -dB C CE f= 2GHz = S opt 1 T is the temperature at the soldering point of the emitter pins. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG), see p(max) p(max) Figure 8. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1emitter 4 34 2base 3emitter 2 4 collector 1, 3 mbb159 2 1 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFG424F - plastic surface mounted flat pack package reverse SOT343F pinning 4 leads 4. Marking Table 4. Marking 1 Type number Marking code BFG424F NE* 1 * = p: made in Hong Kong. BFG424F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 13 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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