Product Information

BFG410W,135

BFG410W,135 electronic component of NXP

Datasheet
RF Bipolar Transistors Single NPN 4.5V 10mA 54mW 50 22GHz
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.3575
10 : USD 0.2714
100 : USD 0.1471
1000 : USD 0.1105
2500 : USD 0.0953
10000 : USD 0.0939
20000 : USD 0.0939
50000 : USD 0.0927
100000 : USD 0.089
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Dc Current Gain Hfe Max
Type
Brand
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2 base Emitter is thermal lead 3emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular 3 4 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 10 12 mA C P total power dissipation T 110 C 54 mW tot s h DC current gain I =10mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2V f= 1MHz 45 fF re C CB f transition frequency I =10mA V =2V f= 2GHz T =25 C 22 GHz T C CE amb G maximum power gain I =10mA V =2V f= 2GHz T =25 C 21 dB max C CE amb F noise figure I =1mA V = 2 V f = 2 GHz = 1.2 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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