BFG97,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DESCRIPTION PINNING age 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1emitter envelope. 2 base It features excellent output voltage capabilities, and is primarily intended 3emitter for use in MATV applications. 4 collector PNP complement is the BFG31. 123 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T =125 C (note 1) 1W tot s h DC current gain I =70 mA V =10 V T =25 C25 80 FE C CE j f transition frequency I =70 mA V =10 V 5.5 GHz T C CE f = 500 MHz T =25 C amb G maximum unilateral power gain I =70 mA V =10 V 16 dB UM C CE f = 500 MHz T =25 C amb I =70 mA V =10 V 12 dB C CE f = 800 MHz T =25 C amb V output voltage I =70 mA V =10 V 700 mV o C CE d 60 dB R =75 im = L f =793.25 MHz T =25 C (p q r) amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =125 C (note 1) 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2