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BFG591,115

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RF Bipolar Transistors NPN 15V 7GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5733 ea
Line Total: USD 0.57

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 20 May to Fri. 24 May MOQ : 1 Multiples : 1 BFG591,115 NXP	1 : USD 0.5733 125 : USD 0.5557 750 : USD 0.5148

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION lfpage 4 High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure High transition frequency PINNING Gold metallization ensures excellent reliability. PIN DESCRIPTION 1emitter APPLICATIONS 2base Intended for applications in the GHz 123 3emitter range such as MATV or CATV Top view MSB002 - 1 4 collector amplifiers and RF communications subscriber equipment. Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I collector current (DC) 200 mA C P total power dissipation up to T =80 C note 1 2W tot s h DC current gain I =70mA V =8V 60 90 250 FE C CE C feedback capacitance I =I =0 V =12V f=1MHz 0.7 pF re C c CE f transition frequency I =70mA V =12V f=1GHz 7 GHz T C CE G maximum unilateral power I =70mA V =12V 13 dB UM C CE gain f= 900MHz T =25 C amb 2 insertion power gain I =70mA V =12V 12 dB C CE s 21 f= 900MHz T =25 C amb Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 04 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 7000 MHz 7000 MHz
Collector- Emitter Voltage VCEO Max 15 V 15 V
Emitter- Base Voltage VEBO 3 V 3 V
Continuous Collector Current 0.2 A 0.2 A
Pd - Power Dissipation 2000 mW 2000 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 223 SOT - 223
Packaging Reel Reel
Configuration Single Single
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.2 A 0.2 A
Factory Pack Quantity : 1000 1000