Product Information

BFR31

BFR31 electronic component of NXP

Datasheet
RF Bipolar Transistors BFR31/TO-236AB///REEL 11 Q3/T4*STANDARD MARK SMDL
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5761 ea
Line Total: USD 0.58

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BFR31
NXP

1 : USD 0.5761
10 : USD 0.5118
25 : USD 0.4619
100 : USD 0.4045
250 : USD 0.3561
500 : USD 0.3137

Read More Specifications

     
Manufacturer
Product Category
Transistor Type
Transistor Polarity
Pd - Power Dissipation
Maximum Operating Temperature
Packaging
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Case Style
No Of Pins
Msl
Svhc
Drain Source Voltage Vds
Termination Type
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFR30 BFR31 N-channel field-effect transistors Product specification 1997 Dec 05 Supersedes data of April 1991NXP Semiconductors Product specification N-channel field-effect transistors BFR30 BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel 3 handbook, halfpage field-effect transistor in a plastic SOT23 package. d g s APPLICATIONS Low level general purpose amplifiers in thick and 12 thin-film circuits. Top view MAM385 PINNING - SOT23 Marking codes: BFR30: M1p. PIN SYMBOL DESCRIPTION BFR31: M2p. (1) 1 d drain Fig.1 Simplified outline and symbol. (1) 2 s source 3g gate Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage 25 V DS V gate-source voltage open drain 25 V GSO P total power dissipation T 40 C 250 mW tot amb I drain current V =0 V =10V DSS GS DS BFR30 4 10 mA BFR31 1 5 mA y common-source transfer admittance I =1 mA V =10V f=1kHz fs D DS BFR30 1 4 mS BFR31 1.5 4.5 mS 1997 Dec 05 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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