Product Information

BFS17,215

BFS17,215 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 25MA 15V 1GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0835 ea
Line Total: USD 0.08

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 100
Multiples : 1
100 : USD 0.1846
500 : USD 0.1458
1000 : USD 0.113
5000 : USD 0.1047

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.0835
5 : USD 0.0834
50 : USD 0.0802
1000 : USD 0.0749

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Svhc
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Gain Bandwidth Ft Typ
Hfe Min
No. Of Transistors
Noise Figure Typ
Smd Marking
Termination Type
Test Frequency
Transistor Case Style
Voltage Vcbo
LoadingGif

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS A wide range of RF applications such as: Mixers and oscillators in TV tuners RF communications equipment. 12 Top view MSB003 PINNING PIN DESCRIPTION Marking code: E1p. 1base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCED DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 25 mA C P total power dissipation up to T =70 C note 1 300 mW tot s f transition frequency I =25mA V = 5 V f = 500 MHz T =25 C1 GHz T C CE j F noise figure I =2mA V =5V R =50 f = 500 MHz 4.5 dB C CE S T =25 C j LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 25 mA C I peak collector current 50 mA CM P total power dissipation up to T =70 C note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature 150 C j Note to the Quick reference data and the Limiting values 1. T is the temperature at the soldering point of the collector pin. s September 1995 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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