BFS17,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS A wide range of RF applications such as: Mixers and oscillators in TV tuners RF communications equipment. 12 Top view MSB003 PINNING PIN DESCRIPTION Marking code: E1p. 1base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCED DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 25 mA C P total power dissipation up to T =70 C note 1 300 mW tot s f transition frequency I =25mA V = 5 V f = 500 MHz T =25 C1 GHz T C CE j F noise figure I =2mA V =5V R =50 f = 500 MHz 4.5 dB C CE S T =25 C j LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 25 mA C I peak collector current 50 mA CM P total power dissipation up to T =70 C note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature 150 C j Note to the Quick reference data and the Limiting values 1. T is the temperature at the soldering point of the collector pin. s September 1995 2