Product Information

BFT92W,115

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Transistors RF Bipolar PNP 35MA 15V 4GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 3000 Multiples : 3000 BFT92W,115 NXP	3000 : USD 0.2617	N/A Obsolete

0 - WHS 2 MOQ : 3000 Multiples : 3000 BFT92W,115 NXP	3000 : USD 0.289	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 BFT92W,115 NXP	1 : USD 0.6805 10 : USD 0.5717 100 : USD 0.3687 1000 : USD 0.3098 3000 : USD 0.2844 9000 : USD 0.2844 24000 : USD 0.2736 45000 : USD 0.2687 99000 : USD 0.2627	N/A Obsolete

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The 3 handbook, 2 columns Gold metallization ensures BFT92W uses the same crystal as the excellent reliability SOT23 version, BFT92. SOT323 (S-mini) package. PINNING 12 APPLICATION MBC870 Top view PIN DESCRIPTION It is intended as a general purpose base transistor for wideband applications 1 Marking code: W1. up to 2 GHz. emitter 2 Fig.1 SOT323. collector 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I collector current (DC) 35 mA C P total power dissipation up to T =93 C note 1 300 mW tot s DC current gain I = 15 mA V = 10 V 20 50 h FE C CE C feedback capacitance I =0 V = 10 V f = 1 MHz 0.5 pF re C CB f transition frequency I = 15 mA V = 10 V 4 GHz T C CE f = 500 MHz G maximum unilateral power gain I = 15 mA V = 10 V 17 dB UM C CE f = 500 MHz T =25 C amb F noise figure I = 5mA V = 10 V 2.5 dB C CE f = 500 MHz T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s May 1994 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Pnp Pnp
Operating Frequency 4000 MHz 4000 MHz
Collector- Emitter Voltage VCEO Max 15 V 15 V
Emitter- Base Voltage VEBO 2 V 2 V
Continuous Collector Current 0.025 A 0.025 A
Pd - Power Dissipation 300 mW 300 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 323 SOT - 323
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.025 A 0.025 A
Factory Pack Quantity : 3000 3000
Collector- Base Voltage Vcbo 20 V 20 V
Dc Current Gain Hfe Max 20 20
Height 1 mm 1 mm
Length 2.2 mm 2.2 mm
Width 1.35 mm 1.35 mm
Cnhts 8541210000 8541210000
Gain Bandwidth Product Ft 4000 Mhz 4000 Mhz
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000