BFU760F,115 NXP

BFU760F,115 electronic component of NXP
BFU760F,115 NXP
BFU760F,115 RF Bipolar Transistors
BFU760F,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BFU760F,115 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFU760F,115 RF Bipolar Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No.BFU760F,115
Manufacturer:NXP
Category:RF Bipolar Transistors
Description:Transistors RF Bipolar NPN WIDEBAND SILICON GERMANIUM RF TRANS
Datasheet:BFU760F,115 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
3000: USD 0.1127 ea
Line Total: USD 338.1 
Availability : 0
  
QtyUnit Price
3000$ 0.1127
6000$ 0.1113
9000$ 0.1099
12000$ 0.1099
15000$ 0.1078
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1127
6000$ 0.1113
9000$ 0.1099
12000$ 0.1099
15000$ 0.1078


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2519


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.575
10$ 1.0236
25$ 0.822
50$ 0.7027
100$ 0.6017
250$ 0.4807
500$ 0.4169
1000$ 0.3498
3000$ 0.2002

   
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RoHS - XON
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
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We are delighted to provide the BFU760F,115 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFU760F,115 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFU760F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity RF transistor High maximum output third-order intercept point 32 dBm at 1.8 GHz 110 GHz f silicon germanium technology T 1.3 Applications Ka band oscillators DROs High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX GPS ZigBee SDARS first stage LNA LTE, cellular, UMTSBFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 25 70 mA C 1 P total power dissipation T 90 C - - 220 mW tot sp h DC current gain I =10mA V =2V 155 330 505 FE C CE T =25 C j C collector-base V =2V f=1MHz - 175 - fF CBS CB capacitance f transition frequency I =50mA V =1V -45 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =50mA V =1V -22 - dB p(max) C CE f= 2.4GHz T =25 C amb NF noise figure I =12mA V =2V -0.50 - dB C CE f= 2.4GHz = S opt IP3 third-order intercept I =30mA V =2.5 V -32 - dBm C CE point Z =Z =50 S L f= 2.4GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU760F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU760F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 April 2011 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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