Product Information

BFU760F,115

BFU760F,115 electronic component of NXP

Datasheet
Transistors RF Bipolar NPN WIDEBAND SILICON GERMANIUM RF TRANS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5347 ea
Line Total: USD 0.53

34299 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 56
Multiples : 1
56 : USD 0.5785
75 : USD 0.5135
300 : USD 0.455
1500 : USD 0.39

34299 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.5347
10 : USD 0.4462
100 : USD 0.3139
500 : USD 0.2599
1000 : USD 0.2231
3000 : USD 0.1828

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

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BFU760F NPN wideband silicon germanium RF transistor Rev. 1 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity RF transistor High maximum output third-order intercept point 32 dBm at 1.8 GHz 110 GHz f silicon germanium technology T 1.3 Applications Ka band oscillators DROs High linearity applications Medium output power applications Wi-Fi / WLAN / WiMAX GPS ZigBee SDARS first stage LNA LTE, cellular, UMTSBFU760F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CBO V collector-emitter voltage open base - - 2.8 V CEO V emitter-base voltage open collector - - 1.0 V EBO I collector current - 25 70 mA C 1 P total power dissipation T 90 C - - 220 mW tot sp h DC current gain I =10mA V =2V 155 330 505 FE C CE T =25 C j C collector-base V =2V f=1MHz - 175 - fF CBS CB capacitance f transition frequency I =50mA V =1V -45 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =50mA V =1V -22 - dB p(max) C CE f= 2.4GHz T =25 C amb NF noise figure I =12mA V =2V -0.50 - dB C CE f= 2.4GHz = S opt IP3 third-order intercept I =30mA V =2.5 V -32 - dBm C CE point Z =Z =50 S L f= 2.4GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU760F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU760F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 April 2011 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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