BFT92,215 NXP

BFT92 PNP 5 GHz wideband transistor Rev. 3 22 January 2016 Product data sheet 1. Product profile 1.1 General description PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A. 1.2 Features and benefits High power gain Low intermodulation distortion 1.3 Applications Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 20 V CBO V collector-emitter voltage open base - - 15 V CEO I DC collector current - - 25 mA C 1 P total power dissipation up to T = 95 C --300mW tot s f transition frequency I = 14 mA V = 10 V f = 500 MHz - 5 - GHz T C CE C feedback capacitance I = 2mA V = 10 V f = 1 MHz - 0.7 - pF re C CE G maximum unilateral power I = 14 mA V = 10 V f = 500 MHz -18 - dB UM C CE gain T = 25 C amb NF noise figure I = 5mA V = 10 V f = 500 MHz -2.5 - dB C CE T = 25 C amb d intermodulation distortion I = 14 mA V = 10 V R =75 - 60 - dB im C CE L V =150 mV T =25 C o amb f = 493.25 MHz (p + q-r) 1 T is the temperature at the soldering point of the collector tab. sBFT92 NXP Semiconductors PNP 5 GHz wideband transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 2 emitter 3 collector DD D 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFT92 TO-236AB Plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code BFT92 W1% 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 2V EBO I DC collector current - 25 mA C I peak collector current f > 1 MHz - 35 mA CM 1 P total power dissipation up to T =95 C - 300 mW tot s T storage temperature 65 150 C stg T junction temperature - 175 C j 1 T is the temperature at the soldering point of the collector tab. s BFT92 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2016. All rights reserved. Product data sheet Rev. 3 22 January 2016 2 of 10